?2006 fairchild semiconductor corporation 1 www.fairchildsemi.com fga25n120antd/fga25n120antd_f109 rev. c0 fga25n120antd/fga25n120antd_f109 1200 v, 25 a npt trench igbt april 2013 fga25n120antd/fga25n120antd_f109 1200 v, 25 a npt trench igbt features ? npt trench technology, positive temperature coefficient ? low saturation voltage: v ce(sat), typ = 2.0 v ? @ i c = 25 a and t c = 25 ? c ? low switching loss: e off, typ = 0.96 mj ? @ i c = 25 a and t c = 25 ? c ? extremely enhanced avalanche capability applications ? induction heating, microwave oven description using fairchild ? 's proprietary trench design and advanced npt technology, the 1200v npt igbt offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. this device is well suited for the reso - nant or soft switching applicati on such a s induction heating, microwave oven. g c e g c e g c e to-3p absolute maximum ratings symbol description fga25n120antd unit v ces collector-emitter voltage 1200 v v ges gate-emitter voltage ? 20 v i c collector current @ t c = 25 ? c 50 a collector current @ t c = 100 ? c 25 a i cm (1) pulsed collector current 90 a i f diode continuous forward current @ t c = 100 ? c 25 a i fm diode maximum forward current 150 a p d maximum power dissipation @ t c = 25 ? c 312 w maximum power dissipation @ t c = 100 ? c 125 w t j operating junction temperature -55 to +150 ? c t stg storage temperature range -55 to +150 ? c t l maximum lead temp. for soldering ? purposes, 1/8? from case for 5 seconds 300 ? c notes: (1) repetitive rating: pulse width limited by max. junction temperature thermal characteristics symbol parameter typ. max. unit r ? jc (igbt) thermal resistance, junction-to-case -- 0.4 ? c /w r ? jc (diode) thermal resistance, junction-to-case -- 2.0 ? c /w r ? ja thermal resistance, junction-to-ambient -- 40 ? c /w
fga25n120antd/fga25n120antd_f109 1200 v, 25 a npt trench igbt ?2006 fairchild semiconductor corporation 2 www.fairchildsemi.com fga25n120antd/fga25n120antd_f109 rev. c0 package marking and ordering information device marking device package reel size tape width quantity fga25n120antd fga25n120antd to-3p - - 30 electrical characteristi cs of the igbt t c = 25c unless otherwise noted symbol parameter test conditions min. typ. max. unit ? off characteristics i ces collector cut-off current v ce = v ces , v ge = 0v -- -- 3 ma i ges g-e leakage current v ge = v ges , v ce = 0v -- -- 250 na ? on characteristics v ge(th) g-e threshold voltage i c = 25ma, v ce = v ge 3.5 5.5 7.5 v v ce(sat) collector to emitter saturation voltage i c = 25a , v ge = 15v -- 2.0 -- v i c = 25a , v ge = 15v, t c = 1 25 ? c -- 2.15 -- v i c = 50a , v ge = 15v -- 2.65 -- v ? dynamic characteristics c ies input capacitance v ce = 30v , v ge = 0v, f = 1mhz -- 3700 -- pf c oes output capacitance -- 130 -- pf c res reverse transfer capacitance -- 80 -- pf ? switching characteristics t d(on) turn-on delay time v cc = 600 v, i c = 25a, r g = 10 ? , v ge = 15v, inductive load, t c = 25? c -- 50 -- ns t r rise time -- 60 -- ns t d(off) turn-off delay time -- 190 -- ns t f fall time -- 100 -- ns e on turn-on switching loss -- 4.1 -- mj e off turn-off switching loss -- 0.96 -- mj e ts total switching loss -- 5.06 -- mj t d(on) turn-on delay time v cc = 600 v, i c = 25a, r g = 10 ? , v ge = 15v, inductive load, t c = 125 ? c -- 50 -- ns t r rise time -- 60 -- ns t d(off) turn-off delay time -- 200 -- ns t f fall time -- 154 -- ns e on turn-on switching loss -- 4.3 -- mj e off turn-off switching loss -- 1.5 -- mj e ts total switching loss -- 5.8 -- mj q g total gate charge v ce = 600 v, i c = 25a, v ge = 15v -- 200 -- nc q ge gate-emitter charge -- 15 -- nc q gc gate-collector charge -- 100 -- nc
fga25n120antd/fga25n120antd_f109 1200 v, 25 a npt trench igbt ?2006 fairchild semiconductor corporation 3 www.fairchildsemi.com fga25n120antd/fga25n120antd_f109 rev. c0 electrical characteristics of diode t c = 25c unless otherwise noted symbol parameter test conditions min. typ. max. unit v fm diode forward voltage i f = 25a t c = 25? c -- 2.0 3.0 v t c = 125 ? c -- 2.1 -- t rr diode reverse recovery time i f = 25a di/dt = 200 a/ ? s t c = 25? c -- 235 350 ns t c = 125 ? c -- 300 -- i rr diode peak reverse recovery cur - rent t c = 25? c -- 27 40 a t c = 125 ? c -- 31 -- q rr diode reverse recovery charge t c = 25? c -- 3130 4700 nc t c = 125 ? c -- 4650 --
fga25n120antd/fga25n120antd_f109 1200 v, 25 a npt trench igbt ?2006 fairchild semiconductor corporation 4 www.fairchildsemi.com fga25n120antd/fga25n120antd_f109 rev. c0 typical performance characteristics figure 1. typical output characteristi cs figure 2. typical saturation voltage 012345 0 20 40 60 80 100 120 common emitter v ge = 15v t c = 25 ? c t c = 125 ? c collector current, i c [a] collector-emitter voltage, v ce [v] 024681 0 0 20 40 60 80 100 120 140 160 180 10v 9v 8v 7v 20v 17v 15v 12v v ge = 6v t c = 25 ? c collector current, i c [a] collector-emitter voltage, v ce [v] characteristics figure 3. saturation voltage vs. case figure 4. saturation voltage vs. v ge temperature at variant current level 25 50 75 100 125 1.5 2.0 2.5 3.0 common emitter v ge = 15v 40a i c = 25a collector-emitter voltage, v ce [v] case temperature, t c [ ? c] 0 4 8 12 16 20 0 4 8 12 16 20 40a 25a common emitter t c = -40 ? c i c = 12.5a collector-emitter voltage, v ce [v] gate-emitter voltage, v ge [v] figure 5. saturation voltage vs. v ge 0 4 8 12 16 20 0 4 8 12 16 20 40a 25a common emitter t c = 125 ? c i c = 12.5a collector-emitter voltage, v ce [v] gate-emitter voltage, v ge [v] 0 4 8 12 16 20 0 4 8 12 16 20 40a 25a common emitter t c = 25 ? c i c = 12.5a collector-emitter voltage, v ce [v] gate-emitter voltage, v ge [v] figure 6. saturation voltage vs. v ge
fga25n120antd/fga25n120antd_f109 1200 v, 25 a npt trench igbt ?2006 fairchild semiconductor corporation 5 www.fairchildsemi.com fga25n120antd/fga25n120antd_f109 rev. c0 typical performance characteristics (continued) figure 7. capacitance characteristics fi gure 8. turn-on characteristics vs. gate resistance 0 10203040506070 10 100 common emitter v cc = 600v, v ge = ? 15v i c = 25a t c = 25 ? c t c = 125 ? c td(on) tr switching time [ns] gate resistance, r g [ ? ] 11 0 0 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 ciss coss common emitter v ge = 0v, f = 1mhz t c = 25 ? c crss capacitance [pf] collector-emitter voltage, v ce [v] figure 9. turn-off characteristics vs. fi gure 10. switching loss vs. gate resistance gate resistance 0 10203040506070 1 10 common emitter v cc = 600v, v ge = ? 15v i c = 25a t c = 25 ? c t c = 125 ? c eon eoff switching loss [mj] gate resistance, r g [ ? ] 0 10203040506070 10 100 1000 common emitter v cc = 600v, v ge = ? 15v i c = 25a t c = 25 ? c t c = 125 ? c td(off) tf switching time [ns] gate resistance, r g [ ? ] figure 11. turn-on characteristics vs. figure 12. turn-off characteristics vs. collector current collector current 10 20 30 40 50 100 common emitter v ge = ? 15v, r g = 10 ? t c = 25 ? c t c = 125 ? c tr td(on) switching time [ns] collector current, i c [a] 10 20 30 40 50 100 common emitter v ge = ? 15v, r g = 10 ? t c = 25 ? c t c = 125 ? c td(off) tf switching time [ns] collector current, i c [a]
fga25n120antd/fga25n120antd_f109 1200 v, 25 a npt trench igbt ?2006 fairchild semiconductor corporation 6 www.fairchildsemi.com fga25n120antd/fga25n120antd_f109 rev. c0 typical performance characteristics (continued) figure 13. switching loss vs. collector current figure 14. gate charge characteristics 10 20 30 40 50 0.1 1 10 common emitter v ge = ? 15v, r g = 10 ? t c = 25 ? c t c = 125 ? c eon eoff switching loss [mj] collector current, i c [a] 0 20 40 60 80 100 120 140 160 180 200 0 2 4 6 8 10 12 14 16 600v 400v common emitter r l = 24 ? t c = 25 ? c vcc = 200v gate-emitter voltage, v ge [v] gate charge, q g [nc] figure 15. soa characterist ics figure 16. turn-off soa 1 10 100 1000 1 10 100 safe operating area v ge = 15v, t c = 125 ? c collector current, i c [a] collector-emitter voltage, v ce [v] 0.1 1 10 100 1000 0.01 0.1 1 10 100 50 ? s 100 ? s 1ms dc operation ic max (pulsed) ic max (continuous) single nonrepetitive pulse t c = 25 ? c curves must be derated linearly with increase in temperature collector current, ic [a] collector - emitter voltage, v ce [v] figure 17. transient thermal impedance of igbt 1 e - 5 1 e - 4 1 e - 3 0 . 0 1 0 . 1 1 1 0 1 e - 3 0 . 0 1 0 . 11 1 0 0.1 0.5 0.2 0.05 0.02 0.01 single pulse t h e r m a l r e s p o n s e [ z t h j c ] r e c t a n g u l a r p u l s e d u r a t i o n [ s e c ] pdm t1 t2 duty factor d = t1 / t2 peak tj = pdm ? zthjc + t c
fga25n120antd/fga25n120antd_f109 1200 v, 25 a npt trench igbt ?2006 fairchild semiconductor corporation 7 www.fairchildsemi.com fga25n120antd/fga25n120antd_f109 rev. c0 typical performance characteristics (continued) figure 18. forward characteristics figure 19. reverse recovery current 0.1 1 10 50 0.0 0.4 0.8 1.2 1.6 2.0 t c = 125 ? c t c = 25 ? c t j = 25 ? c t j = 125 ? c forward voltage , v f [v] forward current , i f [a] 51 01 52 02 5 0 5 10 15 20 25 30 di/dt = 100a/ ? s di/dt = 200a/ ? s reverse recovery currnet , i rr [a] forward current , i f [a] figure 20. stored charge figure 21. reverse recovery time 5 10152025 0 100 200 300 di/dt = 100a/ ? s di/dt = 200a/ ? s reverse recovery time , t rr [ns] forward current , i f [a] 5 10152025 0 1000 2000 3000 4000 di/dt = 100a/ ? s di/dt = 200a/ ? s stored recovery charge , q rr [nc] forward current , i f [a]
fga25n120antd/fga25n120antd_f109 1200 v, 25 a npt trench igbt ?2006 fairchild semiconductor corporation 8 www.fairchildsemi.com fga25n120antd/fga25n120antd_f109 rev. c0 mechanical dimensions to-3pn dimensions in millimeters
fga25n120antd/fga25n120antd_f109 1200 v, 25 a npt trench igbt ?2006 fairchild semiconductor corporation 9 www.fairchildsemi.com fga25n120antd/fga25n120antd_f109 rev. c0 trademarks the following includes registered and unregistered trademarks and se rvice marks, owned by fairchild semiconductor and/or its gl obal subsidiaries, and is not intended to be an exhaustive list of all such trademarks. *trademarks of system general corporation, used under license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes with out further notice to any products herein to improve reliability, function, or design. fairchild does not assume an y liability arising out of the application or use of any product or circuit described herein; neither does it convey an y license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild?s wo rldwide terms and conditions, specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized for use as critical co mponents in life support devices or systems without the express written approval of fa irchild semiconductor corporation. as used here in: 1. life support devices or systems ar e devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a signi ficant injury of the user. 2. a critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms 2cool? 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